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It has been known for almost 25 years that high temperature treatment of polar faces of SiC crystals lead to the graphitisation of the surface as a consequence of Si preferential sublimation. The group of Walt de Heer in Atlanta has proposed to use this procedure to obtain macroscopic multilayer graphene samples. This has lead to a renewal of interest for the study of the graphitic layers grown on the SiC surfaces. Due to the polar nature of the material, the 6H(4H)-SiC substrate present twodoi:10.1504/ijnt.2010.031726 fatcat:5wvrenpabjg45cjc2dofpndw7u