Bilayer graphene quantum dot defined by topgates
André Müller, Bernd Kaestner, Frank Hohls, Thomas Weimann, Klaus Pierz, Hans W. Schumacher
2014
Journal of Applied Physics
We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.
doi:10.1063/1.4884617
fatcat:z4d366blxvdxrbxx7dpnkboxsy