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Improved I-V Characteristics of SiC MOSFETs by TCE Thermal Gate Oxidation
2005 IEEE Conference on Electron Devices and Solid-State Circuits
The effects of TCE (trichloroethylene) thermal gate oxidation on the electrical characteristics of SiC MOSFETs are investigated. It is found that TCE thermal gate oxidation can improve the Id-Vd characteristics, increase the field-effect mobility, and reduce the threshold voltage and sub-threshold slope of the devices. The better device characteristics are believed to be attributed to the TCE-induced reductions of charges in the gate oxide and traps at the SiC/SiO2 interface, and also to the
doi:10.1109/edssc.2005.1635399
fatcat:rzn5upr5xrh33l4vhbxjdsdbga