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Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon
2008
Journal of Applied Physics
A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si and the width of the transverse optical (TO) Raman peak is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for these magnitudes are used. This reduced dispersion in the predicted values of the bond-angle dispersion together with the broad agreement with its scarce direct determinations is then used to analyze the strain energy in
doi:10.1063/1.2990767
fatcat:uhclc743rvdqjk3dxuqbipw6yi