Radiation hardness studies of a 130 nm Silicon Germanium BiCMOS technology with a dedicated ASIC [article]

I Mandić, H F W Sadrozinski, V Emerson, F Martinez-McKinney, W Kononenko, S Phillips, G Mayers, J D Cressler, S Rescia, E Spencer, F M Newcomer, M Ruat (+9 others)
We present the radiation hardness studies on the bipolar devices of the 130 nm 8WL Silicon Germanium (SiGe) BiCMOS technology from IBM. This technology has been proposed as one of the candidates for the Front-End (FE) readout chip of the upgraded Inner Detector (ID) and the Liquid Argon Calorimeter (LAr) of the ATLAS Upgrade experiment. After neutron irradiations, devices remain at acceptable performances at the maximum radiation levels expected in the Si tracker and LAr calorimeter.
doi:10.5170/cern-2009-006.439 fatcat:g2jfy7b2jzgk5db6vpujmlw2ja