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V-shaped dislocations in a GaN epitaxial layer on GaN substrate
2019
AIP Advances
Preserved Fulltext
In this study, V-shaped dislocations in a GaN epitaxial layer on a free-standing GaN substrate were observed. Our investigation further revealed that the V-shaped dislocations were newly generated at the interface in the epilayer rather than propagated from the GaN substrate. V-shaped dislocations consist of two straight parts. The straight parts of the V-shaped dislocations were separated from each other in the m-direction and tilted toward the step-flow direction of the GaN epitaxial layer.
doi:10.1063/1.5114866
fatcat:j6xuuilug5ddbn5v33skwgey2i