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An STM Observation of Bi-nanowire Growth on the Si(100) Surface
Si(100)表面におけるBiナノワイヤ形成過程の走査トンネル顕微鏡観察
2003
Shinku
Si(100)表面におけるBiナノワイヤ形成過程の走査トンネル顕微鏡観察
Preserved Fulltext
Bi atoms deposited on the Si (100) surface at temperatures higher than 400°C, form one-dimensional wires consisting of two chains of Bi dimers in the topmost layer. The dynamic process of Bi-nanowire formation has been investigated by scanning tunneling microscopy (STM) by performing in-situ observations at elevated temperatures. From the consecutive STM images taken after Bi deposition on the surface, we found that Bi-nanowires are formed by expelling atoms that compose an upper terrace at the
doi:10.3131/jvsj.46.501
fatcat:2x3yuzpvunbjbm7up6f77sbd3e