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Growth of Ge Homoepitaxial Films by Metal-Organic Chemical Vapor Deposition Using t-C4H9GeH3
2015
ECS Journal of Solid State Science and Technology
Ge homoepitaxial films are grown at low growth temperature of 320 • C by metal-organic chemical vapor deposition (MOCVD) using tertiarybutylgermane (t-C 4 H 9 GeH 3 ). We also performed ab initio calculations in order to reveal the chemical reaction for the epitaxial growth. As the result, it was revealed that the t-C 4 H 9 GeH 3 was most likely decomposed into germane (GeH 4 ) and isobutene [CH 2 =C(CH 3 ) 2 ] through the β-hydrogen elimination. We considered that this chemical nature allowed
doi:10.1149/2.0191505jss
fatcat:qquvex6hmrdfbajamnoe47sen4