Growth of Ge Homoepitaxial Films by Metal-Organic Chemical Vapor Deposition Using t-C4H9GeH3

Kohei Suda, Takahiro Kijima, Seiya Ishihara, Naomi Sawamoto, Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Yoshio Ohshita, Atsushi Ogura
2015 ECS Journal of Solid State Science and Technology  
Ge homoepitaxial films are grown at low growth temperature of 320 • C by metal-organic chemical vapor deposition (MOCVD) using tertiarybutylgermane (t-C 4 H 9 GeH 3 ). We also performed ab initio calculations in order to reveal the chemical reaction for the epitaxial growth. As the result, it was revealed that the t-C 4 H 9 GeH 3 was most likely decomposed into germane (GeH 4 ) and isobutene [CH 2 =C(CH 3 ) 2 ] through the β-hydrogen elimination. We considered that this chemical nature allowed
more » ... he growth temperature as low as that obtained by GeH 4 precursor with sufficiently suppressed C impurity incorporation.
doi:10.1149/2.0191505jss fatcat:qquvex6hmrdfbajamnoe47sen4