In 4H-SiC PiN diodes, Shockley-type stacking faults expand from basal plane dislocations under conducting forward current. We report for the rst time overlapped single Shockley-type stacking faults in a 4H-SiC PiN diode after forward conduction. In photoluminescence measurements, we observed not only an emission peak at 425 nm, which corresponds to the single Shockley-type stacking fault, but also one at 432 nm. In cross-sectional cathode luminescence images, emission lines at 425 nm and 432 nm

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... merge and become straight. Transmission electron microscope images showed that the structure at the position with the 432 nm emission overlapped the single Shockley-type stacking faults.