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Thermal stabilities of Cu-contacted n ϩ -p junctions with tungsten nitride (WN x ) diffusion barriers deposited at various nitrogen flow ratios are investigated. N 2 O plasma treatment is applied to improve thermal stability and barrier performance of WN x film. Sheet resistance of Cu/N 2 O plasma-treated WN x /Si is fairly stable even after annealing at 750°C for 30 min. Moreover, N 2 O plasma treatment enables the Cu/WN x /n ϩ -p junction diodes to sustain thermal annealing at 600°C withoutdoi:10.1116/1.1715087 fatcat:nukdonbnjjacpmqqv3dtym75ya