21pFB-3 強磁性電極/高In組成InGaAs-2次元電子系接合における非局所スピン注入のゲート電圧依存性(21pFB 半導体スピン物性・磁性半導体,領域4(半導体,メゾスコピック系・局在))
21pFB-3 Gate voltage dependence of non-local spin injection in ferromagneticmetal/InGaAs-two-dimensional electron system

S. Hidaka, T. Kondo, M. Akabori, S. Yamada
2012 Meeting Abstracts of the Physical Society of Japan (Nihon Butsuri Gakkai koen gaiyoshu)  
doi:10.11316/jpsgaiyo.67.2.4.0_654_1 fatcat:fnmkyd4oavhlteu2ugm7xtbeou