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A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling
2007
20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07)
The Lateral Asymmetric MOSFET, which has longitudinal doping variation in the channel, is the building block of many categories of High Voltage MOSFETs e.g. LDMOS, VDMOS. Here we report a new charge based analytical compact model for Lateral Asymmetric MOSFET (LAMOS). Numerical device simulations are used to validate the intrinsic MOS region of high voltage MOSFET for lateral doping gradient in the channel. The model shows good results in DC and most importantly in AC regime, especially the
doi:10.1109/vlsid.2007.15
dblp:conf/vlsid/ChauhanKGBDI07
fatcat:6ep46czttzhvrk73fhffywj2ha