F205 Heat and mass transfer under an EMCZ condition
F205 EMCZシリコン結晶育成時の熱と物質の輸送現象(オーガナイズドセッション17 : 材料およびデバイス製造の熱工学)

Koichi KAKIMOTO, Akimasa TASHIRO, Hideo ISHII, Takashige SHINOZAKI, Yoshio HASHIMOTO
2001 Proceedings of thermal engineering conference  
This paper aims to stuCly mechanism of hea1 and mass trans「 er in silicon melt undcr elcctromagne [ icl Czochralski growth 〔 EMCZ ) . The EMCZ me [ hod is a one of Ihe candida [ e method 【o reduce Clensity of voids in which a lo [of vacancies are agglomcrateCl . Th 巳 experimenta ]works r巳vealed [ haL hea[and ass ef oxygen impurity was enhanced i冂 the EMCZ me [ hod, while the rnechanism of such enhancement is no 【 clarified . Thc objec 【oflhe presentwork is to clarify [ he cnhancement m 巳chanism
more » ... ofhea [and mass 【 ransfer . Key 吻 厂ゴ∫: Silicon , Chochralski , Magne 【 ic fie 】 ds, oxygen
doi:10.1299/jsmeptec.2001.0_567 fatcat:dbybkkcrvvayjnfzii4f6cxq44