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A Model of Material Removal and Post Process Surface Topography for Copper CMP
Increasing systemic error during copper CMP (Chemical Mechanical Planarization) is due to the uneven surface topography generated during the process. A mechanistic model based on a fundamental understanding of the process constituents was proposed to predict material removal rates and the post CMP topography. Two synergistic mechanisms were proposed: 1) chemically dominant behavior is explained by the repetitive removal and formation of a protective layer on copper surface and chemicaldoi:10.1016/j.proeng.2011.11.082 fatcat:kyattaku2rcg7nfkjl6g2wo5p4