Increasing systemic error during copper CMP (Chemical Mechanical Planarization) is due to the uneven surface topography generated during the process. A mechanistic model based on a fundamental understanding of the process constituents was proposed to predict material removal rates and the post CMP topography. Two synergistic mechanisms were proposed: 1) chemically dominant behavior is explained by the repetitive removal and formation of a protective layer on copper surface and chemical

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... on during the process, 2) mechanically dominant removal mechanism is due to the material behavior of copper at the nano-scale and subsequent oxidation and removal of the plastically deformed copper. As a step forward to optimize the process and the manufacturing system, this model was extended to explain pattern dependent variability during copper CMP.