Development of CMOS technology is approaching severe technological limits in the next 10 -15 years. Overcoming these limits will demand introduction of new manufacturable materials and device structures to extend the speed of silicon integrated circuits at the historical rate of 17 % per year to the end of the 2001 International Technology Roadmap for Semiconductors (2016). Following a brief discussion of these limits, this paper will review the most promising approaches to new materials,

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... structures and issues related to their integration in advanced CMOS \ structures. The paper will conclude with some brief observations and issues regarding extension of CMOS-like FET structures via new nano-scale materials.