Fast Growth Rate Epitaxy by Chloride Precursors

Francesco La Via, Massimo Camarda, Andrea Canino, Andrea Severino, Antonino La Magna, Marco Mauceri, Carmelo Vecchio, Danilo Crippa
2013 Materials Science Forum  
In this paper the epitaxial process with chloride precursors has been described. In particular it has been shown that the growth rate can be increased to about 100 μm/h but higher growth rate can be difficult to reach due to the limited surface diffusion at the usual temperature of SiC epitaxy. This process gives several advantages because it gives the opportunity to increase the throughput and consequently to reduce the cost of epitaxy, using new reactor structures, and to reduce several kind
more » ... educe several kind of defects (Basal Plane Dislocations, Stacking Faults, Threading Dislocations) and to decrease the surface roughness at the same time.
doi:10.4028/www.scientific.net/msf.740-742.167 fatcat:nrhnh5chmzfvvetkdsy6vyhsr4