The ultimate limits in scaling of conventional MOSFET devices have led the researchers to look for novel device concepts such as dual-gate SOI devices, FinFETs, focused ion beam MOSFETs, etc. These novel devices suppress some of the short channel effects exhibited by conventional MOSFETs. However, a lot of the old issues remain and new issues begin to appear. For example, in both dual-gate SOI MOSFETs and in FinFET devices, quantum mechanical size-quantization effects significantly affect the

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... erall device behavior. In addition, unintentional doping leads to considerable fluctuation in the device parameters, and the electron-electron interactions affect the thermalization of the carriers at the drain end of the device. In this work, we have investigated the influence of these relatively new and challenging issues on the operation of a narrow-width SOI device structure from Fig. 1 [1] .