The dependence of the 1/f noise on 2D electron concentration in the channel n Ch of AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors has been studied and compared. The dependencies of Hooge parameter α Ch for the noise sources located in the channel of the transistors on sheet electron concentration are found identical for both types of devices. The increase of the Hooge parameter α Ch with the decrease of the channel

more »

... ntration observed in both types of devices confirms that the noise sources are located in the region under the gate in the AlGaN/GaN heterostructure and that electron tunneling from the 2D electron gas into the traps in GaN or AlGaN layers is a probable noise mechanism.