Study of the Interconnect Failure Mechanism and Micro-effort for ULSI

Qian Lin, College of Physics and Electronic Information Engineer, Qinghai Nationalities University, Xining, 810007, China. Haifeng Wu is with Chengdu Ganide Technology, Chengdu, 610073, China., Haifeng Wu
2019 International Journal of Computer and Communication Engineering  
Interconnect reliability has been regarded as a discipline that must be seriously taken into account from the early design phase of ultra large scale integration (ULSI). A synthetic review of valuable solutions to improve interconnect reliability is proposed in this paper. At first, a comprehensive review of the interconnect failure mechanisms and micro-efforts are carried out. Four types of interconnect failure mechanisms including EM, SM, TM and TDDB are illustrated in detail. Depending on
more » ... ir different effects for failure, the interconnect micro-effects are classified into the positive effects including the short-length effect, self-healing effect, reservoir effect and the negative effects which involves the skin effect, joule heating, current crowding , bandwidth, coupled noise, parasitic, RC delay, crosstalk and power dissipation and so on. Secondly, a novel qualitative evaluation method based on the radar chart has been presented, which visually shows the contrast of the key performance related to the interconnect failures. These present results might provide some valuable guidance for the study of IC interconnect reliability. The elevated temperature is the major contributor for reliability degradation. In the micro-interconnect structure, high current which is caused by the geometrical shape of interconnect lines would produce a large number of joule heating and local temperature rise and even temperature gradient. The temperature gradient brings about TM which occurs along the direction of temperature gradient [22] . It is investigated
doi:10.17706/ijcce.2019.8.3.104-118 fatcat:zftxwko365dvldkrun4vazmhiy