Impact of near-contact barriers on the subthreshold slope of short-channel CNTFETs

Martin Claus, Stefan Blawid, Michael Schroter
2013 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)  
Recent experimental investigations of sub-10 nm carbon nanotube (CNT) field-effect transistors (FETs) promote CNT based 1D-electronics as a candidate for a future aggressively scaled transistor technology. However, the ballistic transport within the 1D semiconducting CNT channel is largely determined by charge injection from the contacts rendering reliable theoretical predictions of the transistor performance difficult. Based on a simplified heterojunction like contact model, we demonstrate by
more » ... we demonstrate by solving the Schrödinger-Poisson equations that aggressive scaling will rely on a careful balance between two components of the injected charges, one responsible for the formation of nearcontact barriers and the other carrying the current. Excellent electrostatic gate control (e.g. employing thin gate oxides) may then enable transistor scaling until the onset of direct sourcedrain tunneling.
doi:10.1109/sispad.2013.6650599 fatcat:6l4n7hhtwjax5br34bjez52sa4