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Comparison of Single-Particle Monte Carlo Simulation with Measured Output Characteristics of an 0.1µm n-MOSFET
VLSI design (Print)
A comparison between non-selfconsistent single-particle Monte Carlo (MC) simulations and measurements of the output characteristics of an 0.1 µm n-MOSFET is presented. First the bulk MC model, which features a new simplified treatment of inelastic acoustic intravalley scattering, is validated by comparison with experimental literature data for mobilities and velocities. The dopant distribution of the MOSFET is obtained from a 2D process simulation, which is calibrated with SIMS and electricaldoi:10.1080/106551402100012327 fatcat:exvsmwbtjbbgbfdsjrsmiekrsy