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The DC behavioural electrothermal model of silicon carbide power MOSFETs under SPICE
2015
2015 IEEE International Conference on Industrial Technology (ICIT)
This paper presents a new behavioural electrothermal model of power Silicon Carbide (SiC) MOSFET under SPICE. This model is based on the MOS model level 1of SPICE, in which phenomena such as Drain Leakage Current IDSS, On-State Resistance R DSon , gate Threshold voltage V GSth , the transconductance (gfs), I-V Characteristics Body diode, temperature-dependent and self-heating are included and represented using behavioural blocks ABM (Analog Behavioural Models) of Spice library. This ultimately
doi:10.1109/icit.2015.7125514
dblp:conf/icit2/LakrimT15
fatcat:m5xw2xdmdnd67bgptzqwsqthmm