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Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si With Non-Alloyed Regrown Ohmic Contacts
2016
IEEE Electron Device Letters
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Without employing gate dielectrics, AlGaN/GaN high-electron mobility transistors (HEMTs) on Si with non-alloyed regrown ohmic contacts exhibit record-low leakage currents ∼10 −12 A/mm, high ON/ OFF current ratios >10 11 . Compared with HEMTs with conventional alloyed ohmic contacts, HEMTs with non-alloyed contacts show a reduction of 10 6 in leakage current, a steeper subthreshold slope, and >50% improvement in breakdown voltage. These observations indicate that avoiding high-temperature
doi:10.1109/led.2015.2497252
fatcat:qvboupgvwfh2rl6hliodlpxx5y