Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si With Non-Alloyed Regrown Ohmic Contacts

Bo Song, Mingda Zhu, Zongyang Hu, Meng Qi, Kazuki Nomoto, Xiaodong Yan, Yu Cao, Debdeep Jena, Huili Grace Xing
2016 IEEE Electron Device Letters  
Without employing gate dielectrics, AlGaN/GaN high-electron mobility transistors (HEMTs) on Si with non-alloyed regrown ohmic contacts exhibit record-low leakage currents ∼10 −12 A/mm, high ON/ OFF current ratios >10 11 . Compared with HEMTs with conventional alloyed ohmic contacts, HEMTs with non-alloyed contacts show a reduction of 10 6 in leakage current, a steeper subthreshold slope, and >50% improvement in breakdown voltage. These observations indicate that avoiding high-temperature
more » ... ohmic processes can lead to improved device performance. Index Terms-Leakage current, non-alloyed and alloyed ohmic contact, regrown contact, trap, GaN on Si, HEMT.
doi:10.1109/led.2015.2497252 fatcat:qvboupgvwfh2rl6hliodlpxx5y