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Light-Emitting Diodes: Research, Manufacturing, and Applications VII
The absorption of lateral guided modes in light-emitting diodes is determined by the photocurrent measurement method. A theory for waveguide dispersion is presented and extended by ray-tracing simulations. Absorption coefficients of InGaN-on-sapphire and AlGaInP-based structures is evaluated by comparison with simulation curves. For nitridebased samples with emission wavelengths of 415 nm and 441 nm, an absorption of 7 cm −1 is obtained. It is found that scattering is present in the bufferdoi:10.1117/12.476552 fatcat:cabro7hdqjgm5igyn5bqytpaie