Comparison of One and Two Stage RF Rectifiers Designed in FDSOI 28 nm and BiCMOS 55 nm

M. Awad, P. Benech, N. Corrao, J-M. Duchamn
2019 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)  
The context of this article is a low power application: RF energy harvesting. In this paper, we compare performances of two Dickson voltage rectifiers realized with two different technologies: FDSOI 28 nm and BiCMOS 55 nm. The measurement of I-V characteristics of diodes in both technologies reveals that FDSOI shows a smaller threshold voltage and less leakage current compared to BiCMOS. It is also ascertained through the measurement results that the efficiency of the rectifier realized with
more » ... FDSOI is better than that of rectifier obtained using BiCMOS. Furthermore, the impact of back gate polarization (BGP) in FDSOI is investigated and a novel dynamic BGP is proposed. Power conversion efficiency (PCE) of 44 % is achieved in FDSOI, whereas, a PCE of 37 % is observed in BiCMOS.
doi:10.1109/eurosoi-ulis45800.2019.9041872 fatcat:2sbroix25jfulmmu3v62fk7csu