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Comparison of One and Two Stage RF Rectifiers Designed in FDSOI 28 nm and BiCMOS 55 nm

M. Awad, P. Benech, N. Corrao, J-M. Duchamn
2019 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)  

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The context of this article is a low power application: RF energy harvesting. In this paper, we compare performances of two Dickson voltage rectifiers realized with two different technologies: FDSOI 28 nm and BiCMOS 55 nm. The measurement of I-V characteristics of diodes in both technologies reveals that FDSOI shows a smaller threshold voltage and less leakage current compared to BiCMOS. It is also ascertained through the measurement results that the efficiency of the rectifier realized with
more » ... FDSOI is better than that of rectifier obtained using BiCMOS. Furthermore, the impact of back gate polarization (BGP) in FDSOI is investigated and a novel dynamic BGP is proposed. Power conversion efficiency (PCE) of 44 % is achieved in FDSOI, whereas, a PCE of 37 % is observed in BiCMOS.
doi:10.1109/eurosoi-ulis45800.2019.9041872 fatcat:2sbroix25jfulmmu3v62fk7csu
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M. Awad, P. Benech, N. Corrao, J-M. Duchamn. "Comparison of One and Two Stage RF Rectifiers Designed in FDSOI 28 nm and BiCMOS 55 nm." 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (2019)