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Electron channelling contrast imaging of dislocations in a conventional SEM
2016
Philosophical Magazine
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Electron channelling contrast imaging of dislocations in a conventional SEM Dislocations in shock loaded tantalum single crystals were imaged using both TEM and ECCI in an SEM with a conventional backscattered electron detector. The results were compared with backscattered electron intensity profiles across dislocations calculated via the dynamic theory of electron diffraction. A one-toone correspondence between ECCI and TEM is established. High voltage and low index reflections should be used
doi:10.1080/14786435.2016.1262971
fatcat:bzrcqd5zrnbrnm7bzixtlmafe4