Comparison of the effects of downstream H2-and O2-based plasmas on the removal of photoresist, silicon, and silicon nitride J. Vac. Sci. Technol. B 31, 021206 (2013) Impacts of point spread function accuracy on patterning prediction and proximity effect correction in low-voltage electron-beam-direct-write lithography J. Vac. Sci. Technol. B 31, 021605 (2013) Origin of defects on targets used to make extreme ultraviolet mask blanks J. Vac. Sci. Technol. A 31, 021403 (2013) Nanometer scale

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... pect-ratio trench etching at controllable angles using ballistic reactive ion etching J. Vac. Sci. Technol. B 31, 010604 (2013) Influence of secondary electrons in high-energy electron beam lithography A defect tolerant method of printing periodic structures with submicron resolution is presented. This technique is based on the self-imaging effect produced when a periodic semi-transparent mask is illuminated with coherent light. An analytical description of the effect, numerical simulations, and experimental evidence that is in good agreement with the theoretical analysis is presented. To explore the extent of defect tolerance, masks with different defect layouts were designed and tested.