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The effects of crystal defects near the surface on the position of surface Fermi level (Es) are investigated using photoluminescence (PL) measurements and synchrotron radiation photoelectron spectroscopy (SRPES). For the lightly Sidoped GaAs(001) surface, PL measurements reveal that after heating to 500 °C a layer with lower PL peak intensities related to gallium vacancies than those of the bulk exists just under the thermal degraded layer. SRPES shows that EFs moves upward to 1.1-1.17 eV abovedoi:10.1380/jsssj.18.633 fatcat:zxd3wgjt3vaefbchfzpyzrpfaq