A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2017; you can also visit the original URL.
The file type is application/pdf
.
Applications of µc-SiOx:H as integrated n-layer and back transparent conductive oxide for a-Si:H/µc-Si:H tandem cells
2014
Japanese Journal of Applied Physics
We have prepared n-type hydrogenated microcrystalline silicon oxide [µc-SiO x :H(n)] films with oxygen contents from 0 to 37.3 at. % by varying the CO 2 -to-SiH 4 flow ratio in a plasma-enhanced chemical vapor deposition (PECVD) system. By using µc-SiO x :H(n) as an effective replacement for integrated µc-Si:H(n) and indium-tin oxide (ITO), µc-Si:H single-junction and a-Si:H/µc-Si:H tandem cells exhibited significantly improved efficiencies of 6.35 and 10.53%, respectively. The improvement of
doi:10.7567/jjap.53.05fv08
fatcat:7wx6jcbtpzfplinrmmy4qyw2ta