Chemical insight into origin of forming-free resistive random-access memory devices

X. Wu, Z. Fang, K. Li, M. Bosman, N. Raghavan, X. Li, H. Y. Yu, N. Singh, G. Q. Lo, X. X. Zhang, K. L. Pey
2011 Applied Physics Letters  
doi:10.1063/1.3645623 fatcat:f3lwhk2hl5gyppl33valdyketq