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Electronic structure of fully epitaxial Co2TiSn thin films
2011
Physical Review B
In this article we report on the properties of thin films of the full Heusler compound Co2TiSn prepared by DC magnetron co-sputtering. Fully epitaxial, stoichiometric films were obtained by deposition on MgO (001) substrates at substrate temperatures above 600C. The films are well ordered in the L21 structure, and the Curie temperature exceeds slightly the bulk value. They show a significant, isotropic magnetoresistance and the resistivity becomes strongly anomalous in the paramagnetic state.
doi:10.1103/physrevb.83.064412
fatcat:bwm6pktwrjhxtlda4isw2oqfna