Measurement of semiconductor surface potential using the scanning electron microscope

Jennifer T. Heath, Chun-Sheng Jiang, Mowafak M. Al-Jassim
2012 Journal of Applied Physics  
Transducer for mechanical impedance testing over a wide frequency range through active feedback Rev. Sci. Instrum. 83, 025001 (2012) Performance of a fast digital integrator in on-field magnetic measurements for particle accelerators Rev. Sci. Instrum. 83, 024702 (2012) Generalized four-point characterization method using capacitive and ohmic contacts Rev. Sci. Instrum. 83, 024703 (2012) Extracting accurate capacitance voltage curves from impedance spectroscopy Appl. Phys. Lett. 100, 042101
more » ... 2) Electrical test method using high density plasmas for high-end printed circuit boards Rev. Sci. Instrum. 83, 013503 (2012) Additional information on J. Appl. Phys. FIG. 3. (Color online) (a) PC1D models (dashed lines) and data (solid lines) for III-V with varying V t and V a . Traces have been staggered vertically. The distortion is removed by using a lower value of V t . (b) For all values of V t , the metallurgical junction location, depletion width, and its change (DW) with V a can be easily observed in dS/dx.
doi:10.1063/1.3684556 fatcat:6cvt4vcuijc4tply5o3da2e7ee