A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2017; you can also visit the original URL.
The file type is application/pdf
.
Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots
2011
Japanese Journal of Applied Physics
The electron-emission properties of nitrogen-induced (N-induced) localized defects in InAsN/GaAs quantum dots (QDs) are investigated in detail by capacitance-voltage (C-V ) profiling and bias-dependent deep-level transient spectroscopy (DLTS). The incorporation of nitrogen (N) into InAs QDs is shown to produce localized defects near QDs and threading-dislocation-related defects in the top GaAs layer. The threading dislocation is associated with an electron-emission energy of approximately 0.648
doi:10.7567/jjap.50.111001
fatcat:tgdqz35xhvdfnjxepsryapk5tu