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Ultra-Low kV EDS – A New Approach to Improved Spatial Resolution, Surface Sensitivity, and Light Element Compositional Imaging and Analysis in the SEM
2017
Microscopy Today
New windowless EDS detectors designed specifically to collect low-energy X-rays (< 1 keV) and to work under ultra-low kV (< 3 kV) imaging conditions with the latest FE-SEMs offer new capabilities for elemental analysis. These capabilities include enhanced spatial resolution for the study of structures down to 10 nm or less, the characterization of surface features only 1-2 nm in thickness, the analysis of highly beam-sensitive or insulating materials, and much lower detection limits for light
doi:10.1017/s1551929517000013
fatcat:b723j5kacnclhpthtzjwrv4kdu