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Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon
2003
IEEE Transactions on Electron Devices
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Charge-coupled devices (CCD's) have been fabricated on high-resistivity, n-type silicon. The resistivity, on the order of 10,000 Ω-cm, allows for depletion depths of several hundred microns. Fully-depleted, back-illuminated operation is achieved by the application of a bias voltage to a ohmic contact on the wafer back side consisting of a thin in-situ doped polycrystalline silicon layer capped by indium tin oxide and silicon dioxide. This thin contact allows for good short wavelength response,
doi:10.1109/ted.2002.806476
fatcat:eckmummpgfcyjbiqv7yfykoilq