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Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors

Mengwei Si, Jiangjiang J. Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael J. Manfra, Roy G. Gordon, Peide D. Ye
2013 Applied Physics Letters  

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2013. Effects of forming gas anneal on ultrathin InGaAs nanowire metaloxide-semiconductor field-effect transistors. Applied Physics Letters 102(9): 093505. Published Version
doi:10.1063/1.4794846 fatcat:alqsrhbxofcx5iq6p33xwihoge
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Mengwei Si, Jiangjiang J. Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael J. Manfra, Roy G. Gordon, Peide D. Ye. "Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors." Applied Physics Letters 102.9 (2013) 093505