Nucleophilic Attack Enables Chemical Suture of Crystalline Silicon at Room Temperature [post]

Xuebiao Deng, Tao Zeng, Jun Li, Guoying Yao, Huai Chen, Liangpang Xu, Linfeng Wei, Mohsen Shakouri, Jimmy Yu, Ying Wang, Zhenyu Yang
2022 unpublished
Crystalline silicon (c-Si) has been widely used in semiconductor and energy-related industries. One of the biggest challenges of c-Si production is its high energy and environmental cost due to the requirement of high-temperature synthetic process and the accompanied intense greenhouse gas emission. Herein, we demonstrate a new process for preparing c-Si directly from hydride-terminated silicane (HSi) under mild conditions. We design a wet-chemistry approach that effectively creates Si-Si bonds
more » ... between HSi flakes via nucleophilic attack by Lewis base reagent at room temperature. c-Si produced by such a chemical suturing process demonstrates promising capability in charge carrier migration and separation under visible light irradiation, which is of critical importance in photocatalysis. Compared to the existent c-Si manufacturing processes, the reported approach drastically reduces the energy consumption and provides a new strategy to tailor the electronic and photophysical properties of c-Si for optoelectronic and catalytic applications.
doi:10.21203/ fatcat:oychqu2kdnbwfajcqiuj4swnoi