A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2011; you can also visit the original URL.
The file type is application/pdf.
Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers
1998
IEEE Photonics Technology Letters
Preserved Fulltext
Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported. SiGe-Si technology has been developed leading to SiGe-Si HBT's with fT = 23 GHz and fmax = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at = 850 nm and bandwidth of 450 MHz. SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB1 and bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.
doi:10.1109/68.661428
fatcat:dehr7kzhc5cmzob3enzvhsk4qy