Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers

J.-S. Rieh, D. Klotzkin, O. Qasaimeh, L.-H. Lu, K. Yang, L.P.B. Katehi, P. Bhattacharya, E.T. Croke
1998 IEEE Photonics Technology Letters  
Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported. SiGe-Si technology has been developed leading to SiGe-Si HBT's with fT = 23 GHz and fmax = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at = 850 nm and bandwidth of 450 MHz. SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB1 and bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.
doi:10.1109/68.661428 fatcat:dehr7kzhc5cmzob3enzvhsk4qy