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(Invited) The Materials Integration of Ge and InxGa1-X As on Si Template for Next Generation CMOS Applications
In the study, the growth of InAs on Si is demonstrated using "interface blocking" technique with SiGe layers as buffer layer. the growth of high quality Ge film on GaAs substrate by ultra high vacuum chemical vapor deposition and high quality InAs material on Ge/SiGe/Si template grown by molecular beam epitaxy will be particularly reported. By the observation of XRD and AFM, both Ge film grown on GaAs material and InAs grown on Si substrates demonstrate high crystallinity and good surfacedoi:10.1149/05303.0059ecst fatcat:7a5h7e6uwff3nkk6jp5gq2iw2m