A trap generation closed-form statistical model for intrinsic oxide breakdown

Huan-Tsung Huang, Ming-Jer Chen, Chi-Wen Su, Jyh-Huei Chen, Chin-Shan Hou, Mong-Song Liang
2001 IEEE Transactions on Electron Devices  
A trap generation statistical model with the trap sphere radius as parameter has been newly formulated in closed-form for intrinsic breakdown of ultrathin oxides and, by incorporating the trap filling fraction as the secondary parameter, can be practically useful in a manufacturing process. Experimental reproduction for different oxide thicknesses and areas has been achieved through the model. A certain criterion has readily been drawn from the model, with which the ultimate thickness limit for
more » ... thickness limit for breakdown can be set.
doi:10.1109/16.925260 fatcat:4l7jqc4mzvdthiy7b4geyfnnyu