Energy-band distortion in highly doped silicon

Der Sun Lee, J.G. Fossum
1983 IEEE Transactions on Electron Devices  
expect to find very high N(0) values to provide good cu .:rent spreading with reductions in on resistance of the order OF :! or more as in Fig. 3 . Such large potential benefits of the (leal ['I profile are, however, reduced to values more in line wit1 the [21 10 to 40 percent seen in the structure of Fig. 10 . The 11 !;ijor [3] correction factors lying between the extremely atteral:ll;ive prediction of the simple theory exemplified by the resu .I of [41 Fig. 3 and the less attractive
more » ... ttractive (considering the extra prcwess [5] effort) results of Fig. 10 were: 1) the use of exact avalarllshe integration rather than tabulated critical field values, an3 2) 161 correcting for the mobility dependence on doping conce 11 1:ra-[ 7 J tion. Whether one would try to use the ideal doping prllfile would in the end depend on the degree of spreading resist;u~~ce [8] and the ability to produce the required profile. Abstract-A plausible model for the doping dependences of the >onduction-and valence-band shifts, and of the concomitant narrowin!;a8, of
doi:10.1109/t-ed.1983.21181 fatcat:fqwaev2aefgmvcpoyclanxomvy