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The thermal oxidation of AlN thin films produces a high quality insulator which exhibits the gate voltage-controlled charge regimes of accumulation, depletion, and inversion on Si surfaces. The temperature dependence of oxidation is important for device processing. We report on the composition, structure, and electrical properties of the AlN versus the oxidization temperature. AlN layers 500 nm thick were deposited by rf sputtering on p-type Si ͑100͒ substrates, followed by oxidation in adoi:10.1063/1.120510 fatcat:kbtvvcj2kzerto4lz2syicdywq