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27aTE-10 表面吸着In原子を用いたInAs結晶点欠陥形成位置の低温STS測定(27aTE 表面界面構造,領域9(表面・界面,結晶成長))
27aTE-10 Low-temperature STS characterization of defect location in InAs crystal using adsorbed In atom
2009
Meeting Abstracts of the Physical Society of Japan (Nihon Butsuri Gakkai koen gaiyoshu)
27aTE-10 Low-temperature STS characterization of defect location in InAs crystal using adsorbed In atom
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