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N-type ohmic contacts to undoped GaAs/AlGaAs quantum wells using only front-sided processing: application to ambipolar FETs
Semiconductor Science and Technology
A back-gated high electron mobility transistor utilizing a p-type doped layer A C Churchill, M P Grimshaw, D A Ritchie et al. AlGaAs/GaAs modulation-doped structures grown on a Be-ion-implanted GaAs back gate Y Hirayama and T Saku Preparation of electron waveguide devices M Knop, M Richter, R Maßmann et al. Fabrication of quantum wires in thermally etched V-grooves by molecular beam epitaxy D Scheiner, Y Hanein and M Heiblum Linear non-hysteretic gating of a very high density 2DEG in an undopeddoi:10.1088/0268-1242/31/6/065013 fatcat:dm4wtnwmhrbstgv346iybp45eu