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Capacitance vs. voltage (C−V ) curves at AC high frequency of a metal-insulator-semiconductor (MIS) capacitor are investigated in this paper. Bi-dimensional simulations with Silvaco TCAD were carried out to study the effect of oxide thickness, the surface of the structure, frequency, temperature and fixed charge in the oxide on the C−V curves. We evaluate also the analysis of MIS capacitor structures by different substrate doping concentrations with and without interface state density atdoi:10.1007/s12034-017-1443-8 fatcat:bmu4x3ea4vb4tenmgl4nkjsmge