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This paper presents the results of thin film silicon (Si) solar cells with in-situ doped epitaxial emitter deposited on Si substrate by rapid thermal chemical vapor deposition (CVD). High resolution transmission electron microscopy (HRTEM) images reveal that low temperature Si epitaxy growth induces mechanical twins at the junction interface. The presence of the twins alters the orientation of the crystal planes, increases the optical path length of light within the epitaxy film and improvesdoi:10.1016/j.egypro.2011.06.130 fatcat:wyd5rjrc3fc6hcfa3l32c6ymai