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Metallization proximity studies for copper spiral inductors on silicon
Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.
The impacts of metallization proximity for copper spiral inductors on silicon have been investigated in this paper. Performance of the spiral inductor versus area consumption trade-off with respect to its core diameter is evaluated qualitatively for the first time. Effects of the inductor's proximte grounded metallization on its overall inductive performance are also analyzed. Index Terms -Spiral inductor, inductance, quality factor, core diameter, eddy current and series resistance. 0-780~-7464-9/02157.00~02 IEEE 02CH37357doi:10.1109/icmts.2002.1193165 fatcat:ekxpr64kpfbzvhyvdqwh3asy44