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Quantum dot infrared photodetectors are expected to be a competitive technology at high operation temperatures in the long and very long wavelength infrared spectral range. Despite the fact that they already achieved notable success, the performance suffers from the thermionic emission of electrons from the quantum dots at elevated temperatures resulting in a decreasing responsivity. In order to provide an efficient carrier injection at high temperatures, quantum dot infrared photodetectors candoi:10.1007/bf03353661 fatcat:yikrzkcitffi7l5mpsxitsdidm