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In this paper, variability analysis of graded channel dual material (GCDM) double gate (DG) strained-silicon (s-Si) MOSFET with fixed charges is analyzed with the help of Sentaurus TCAD. By varying the different device parameters, the variability analysis of the proposed GCDM-DG s-Si MOSFET is performed with respect to variations in threshold voltage and drain current as the line edge roughness and fluctuations in random dopant, contact resistance, and oxide thickness are considered. Thedoi:10.21203/rs.3.rs-412530/v1 fatcat:bqguyrejzbdhtn4gd2evzmxbge