New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams

J.P.M. Hoefnagels, E. Langereis, M.C.M. van de Sanden, W.M.M. Kessels
2004 Materials Research Society Symposium Proceedings  
Hoefnagels, J.P.M.; Langereis, E.; van de Sanden, M.C.M.; Kessels, W.M.M. ABSTRACT A new ultrahigh vacuum setup is presented which is designed for studying the surface science aspects of a-Si:H film growth using various advanced optical diagnostic techniques. The setup is equipped with plasma and radical sources which produce well-defined radicals beams such that the a-Si:H deposition process can be mimicked. In this paper the initial experiments with respect to deposition of a-Si:H using a hot
more » ... a-Si:H using a hot wire source and etching of a-Si:H by atomic hydrogen are presented. These processes are monitored by real time spectroscopic ellipsometry and the etch yield of Si by atomic hydrogen is quantified to be 0.005±0.002 Si atoms per incoming H atom.
doi:10.1557/proc-808-a9.24 fatcat:xemsohccwvhnjmjwwschitq2zq